A Physical Model for Work-Function Variation in Ultra-Short Channel Metal-Gate MOSFETs

作者：Rasouli Seid Hadi^*; Xu Chuan; Singh Navab; Banerjee Kaustav

来源：IEEE Electron Device Letters, 2011, 32(11): 1507-1509.

DOI：10.1109/LED.2011.2166531

• Grain orientations (GOs)
• metal gate
• quasi-ballistic transport
• work-function variation (WFV)

In this letter, an accurate physical model for work-function variation (WFV) relevant to ultrashort-channel (< 32 nm) MOSFETs has been formulated that considers the work function and size of the individual grains in determining the local MOS band structure. The proposed model is shown to be much more accurate than the most recently published model. Additionally, using this new model, WFV effect in a 3-D device can be captured using 2-D device simulation, resulting in a significantly lower simulation time.

• 出版日期2011-11