科研之友
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摘要
We analyzed depth distribution of composition and growth modes during Ga deposition on Si(111)-2square-root3 x 2square-root3-Sn and square-root3 x square-root3-Ag structures at room temperature. Applying RHEED-TRAXS (total reflection angle X-ray spectroscopy), the dependence of the X-ray (GaK, SnL, AgL, and SiK) emission on the glancing angle of the electron beam was measured. When 1 ML of Ga was deposited on the 2square-root3 x 2square-root3-Sn structure, the mixing of Ga and Sn atoms was clearly observed, and a quasi-square-root3 x square-root3-(Sn,Ga) structure was formed. After further Ga deposition, a liquid-like film of Ga-Sn alloy was formed. When 1 ML of Ga was deposited on the square-root3 x square-root3-Ag surface, the structure was destroyed and a Ga layer was formed on the Si(111) surface, and Ag atoms which dissociated from the square-root3 x square-root3-Ag structure formed particles on the underlying Ga layer. For further deposition, a liquid-like Ga film grew, and Ag particles were buried in the Ga film without being destroyed. This alloying and separation of metals in atomic scale is discussed referring to the bulk phase diagrams of binary alloys.
- 出版日期1995-6-10
