Annealing temperature effects on the electrical properties of (K, Na) NbO3 thin film fabricated by a sol-gel process with a citrate precursor solution

作者：Yao, L.; Zhu, K.^*; Wang, J.; Liu, J.; Qiu, J.; Cheng, M.; Gu, Q.

来源：Ferroelectrics, 2016, 493(1): 47-53.

DOI：10.1080/00150193.2016.1133213

• KNN film
• Nb2O5
• sol-gel process
• annealing temperature
• electrical property

Utilizing the comparatively low cost niobium pentoxide (Nb2O5) as raw material, (K,Na)NbO3(KNN) thin films were deposited onto Ti substrate by a sol-gel non-alkoxide process. The effects of annealing temperature on the phase, morphology, dielectric, and ferroelectric properties of KNN thin films were investigated. KNN thin films without impurities were obtained above 700 degrees C, and the microstructure of all films were dense and uniform. A maximum dielectric constant of 480 was obtained in the film annealed at 700 degrees C, which is comparable to the film prepared from niobium ethoxide.

• 出版日期2016-3-15
• 单位机械结构力学及控制国家重点实验室; 南京航空航天大学