Nano-lithography free formation of high density Ge-on-insulator network for epitaxial template

作者：Yokoyama Hiroyuki; Toko Kaoru; Sadoh Taizoh; Miyao Masanobu^*

来源：Applied Physics Letters, 2012, 100(9): 092111.

DOI：10.1063/1.3691258

• elemental semiconductors
• epitaxial growth
• evaporation
• germanium
• III-V semiconductors
• magnetic materials
• melting
• nanolithography
• semiconductor growth
• semiconductor-insulator boundaries

High-quality Ge-on-insulator (GOI) structures are essential for integrating multi-functional devices onto the Si-platform. We develop the nano-lithography free method for single-crystalline GOI networks by combining partial Ge evaporation and rapid-melting growth techniques. This realizes chip size GOI with high Ge coverage fractions (%26gt; 75%), which is crisscrossed with nano-spacing (similar to 100 nm width). Over-epitaxy of Ge on the GOI network is also examined, which achieves single-crystalline GOI uniform-plane by covering the nano-spacing. This proves the validity of high-density GOI networks as the epitaxial template. This method will facilitate the heterogeneous integration of Ge, III-V semiconductors, and magnetic materials on the Si-platform.

• 出版日期2012-2-27