A quantitative discussion on band-gap energy and carrier density of CdO in terms of temperature and oxygen partial pressure

作者：Grado Caffaro M A; Grado Caffaro M

来源：Physics Letters A, 2008, 372(27-28): 4858-4860.

DOI：10.1016/j.physleta.2008.04.068

• cadmium oxide
• band-gap shift
• excitons
• electron density
• oxygen partial pressure
• substrate temperature

Calculations relative to the band-gap energy shift and carrier spatial density in cadmium oxide are performed in terms of the oxygen partial pressure and substrate temperature relative to the deposition process in the crystal growth of the above material, starting from the consideration of the Fermi energy of an exciton gas. In particular, the band-gap shift experienced by cadmium oxide in terms of the corresponding partial pressure of oxygen is considered as well as the electron spatial density as a function of the pressure in question. Influence of temperature is discussed by estimating the average rate of variation of the band-gap shift versus temperature. In addition, the sensitivity of the above-mentioned shift to temperature is studied by means of a suitable parameter.

• 出版日期2008-6-30