摘要
In this paper we report a two step method to grow triangle-shaped single-crystal MoS2 on < 0001 >-oriented sapphire substrate. XPS showed the growth progress is van der walls epitaxial. The largest triangle is about 200 mu m in lateral. Raman and AFM results indicate that the triangles are monolayer. The process is simple and controllable. The sulfidation time has a great influence on the triangle size. With enough sulfidation time, all the MoS2 flakes will be monolyaer. Prolonging the time of sulfidation, the triangles grow larger in size.
- 出版日期2015