摘要

A simple scheme for the stable fourth-harmonic generation of a Q-switched nanosecond-kilohertz Nd:YVO4 laser through a type-I beta-barium borate crystal is presented. By heating the crystal at an optimized temperature, a conversion efficiency of up to 30.2% from 532 to 266nm is achieved at a repetition rate of 20 kHz, and the fluctuation in average power at 266nm is less than 0.9% at approximately 1.1 W. The application of the 266nm laser to the laser dicing of a silicon wafer is also reported.

  • 出版日期2012-8

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