Grain boundary dynamics of SiC bicrystals under shear deformation

作者：Bringuier Stefan^*; Manga Venkateswara Rao; Runge Keith; Deymier Pierre; Muralidharan Krishna

来源：Materials Science and Engineering A-Structural Materials Properties Microstructure and Processing, 2015, 634: 161-166.

DOI：10.1016/j.msea.2015.03.022

• Stick-slip
• Athermal dislocation climb
• Slide-climb
• Silicon carbide
• Bicrystals

The dynamics of SiC grain boundaries under shear are characterized using molecular dynamics simulations. At low-temperatures, low-angle grain boundaries exhibit stick-slip behavior due to athermal climb of edge dislocations along the grain boundary. With increasing temperature stick-slip becomes less pronounced due to dislocation glide, and at high-temperatures, structural disordering of the low-angle grain boundary inhibits stick-slip. In contrast, structural disordering of the high-angle grain boundary is induced under shear even at low temperatures, resulting in a significantly dampened stick-slip behavior.

• 出版日期2015-5-14