科研之友
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摘要
It is established that charge carrier (hole) transport in the Al-Se95As5 < EuF3 >-Te structure is effected by unipolar injection currents limited by space charges with the involvement of two capture trap groups. Shallow traps corresponding to charged intrinsic defects C-1(-) are related to broken selenium bonds.
Deep traps corresponding to charged intrinsic defects P-2(-) are formed by arsenic atoms with broken coordination. It is shown that the EuF3 impurity strongly affects the concentration of the capture traps, especially those localized near the Fermi level.
- 出版日期2011-12
