Multimodal Photodiode and Phototransistor Device Based on Two-Dimensional Materials

作者：Namgung Seon; Shaver Jonah; Oh Sang Hyun; Koester Steven J^*

来源：ACS Nano, 2016, 10(11): 10500-10506.

DOI：10.1021/acsnano.6b06468

• multimodal
• photodiode
• phototransistor
• 2D materials
• Schottky barrier

With strong light matter interaction in their atomically thin layered structures, two-dimensional (2D) materials have been widely investigated for optoelectronic applications such as photodetectors and photovoltaic devices. Depending on the aim of optoelectronic applications, different device structures have been employed. Lateral phototransistor structures have been employed for high optical gain, while vertical photodiode structures have been employed for fast response and low power operation. Herein, we demonstrate a multimodal photodetector platform based on 2D materials, combining both a phototransistor and a photodiode and taking the corresponding desirable characteristics from each structure within a single device. In this platform, a multilayered transition-metal dichalcogenide flake is transferred on top of metal electrodes, and a transparent gate electrode is employed. The channel region of the flake between electrodes operates as a phototransistor providing a high gain mode, while the electrode region in the same flake operates as a vertical Schottky photodiode providing a fast response mode. These modes can be dynamically selected by controlling the drain voltage and gate voltage.

• 出版日期2016-11