Ambipolar Graphene-Quantum Dot Hybrid Vertical Photodetector with a Graphene Electrode

作者：Che, Yongli; Zhang, Yating^*; Cao, Xiaolong; Zhang, Haiting; Song, Xiaoxian; Cao, Mingxuan; Yu, Yu; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan

来源：ACS Applied Materials & Interfaces, 2017, 9(37): 32001-32007.

DOI：10.1021/acsami.71306629

• vertical photodetector
• graphene electrode
• quantum dot
• graphene quantum dot hybrid
• Schottky barrier
• short channel

A strategy to fabricate an ambipolar near-infrared vertical photodetector (VPD) by sandwiching a photoactive material as a channel film between the bottom graphene and top metal electrodes was developed. The channel length in the vertical architecture was determined by the channel layer thickness, which can provide an ultrashort channel length without the need for a high precision manufacturing process. The performance of VPDs with two types of semiconductor layers, a graphene PbS quantum dot hybrid (GQDH) and PbS quantum dots (QDs), was measured. The GQDH VPD showed better photoelectric properties than the QD VPD because of the high mobility of graphene doped in the channel. The GQDH VPD exhibited excellent photoresponse properties with a responsivity of 1.6 X 10(4) A/W in the p-type regime and a fast response speed with a rise time of 8 ms. The simple manufacture and the promising photoresponse of the GQDH VPD seveal that an easy and effective way to fabricate high-performance ambipolar photodetectors was developed.

• 出版日期2017-9-20
• 单位中国人民解放军国防科学技术大学; 山东大学; 天津大学