Anisotropic electron spin relaxation in bulk GaN

作者:Buss J H*; Rudolph J; Natali F; Semond F; Haegele D
来源:Applied Physics Letters, 2009, 95(19): 192107.
DOI:10.1063/1.3261755

摘要

Electron spin dynamics in n-type c-oriented wurtzite GaN epilayers is studied by time-resolved Kerr-rotation measurements at T=80 K. The electron spin lifetime shows a sudden increase if an external magnetic field is applied in the sample plane. This enhancement is explained by anisotropic Dyakonov-Perel spin relaxation in bulk GaN as a direct consequence of the anisotropy of spin-orbit coupling in semiconductors with wurtzite structure.

  • 出版日期2009-11-9