Atomic migration in eutectic SnBi solder alloys due to current stressing

作者：Chen Chih ming^*; Huang Chih chieh

来源：Journal of Materials Research, 2008, 23(4): 1051-1056.

DOI：10.1557/JMR.2008.0128

Current stressing at densities from 2.9 to 7.3 x 10(4) A/cm(2) has significant effects on the atomic migration of eutectic SnBi solder alloys. At lower density (2.9 x 10(4) A/cm(2)), electromigration dominates the migration of both Sn and Bi, and drives Sn and Bi atoms to migrate toward the anode side. While at higher densities (4.4 and 7.3 x 10(4) A/cm(2)), the enhanced Bi electromigration induces a back stress, which promotes a reversed migration of Sn toward the cathode side. A large number of Sn atoms accumulate at the cathode side and form lumps there.

• 出版日期2008-4