High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

作者：Gacevic Z^*; Fernandez Garrido S; Rebled J M; Estrade S; Peiro F; Calleja E

来源：Applied Physics Letters, 2011, 99(3): 031103.

DOI：10.1063/1.3614434

We report on properties of high quality similar to 60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be +/- 1.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution. 2011 American Institute of Physics. [doi :10.1063/1.3614434]

• 出版日期2011-7-18