Aluminum-induced crystallization of amorphous silicon films deposited by hot wire chemical vapor deposition on glass substrates

作者：Ebil Ozgenc^*; Aparicio Roger; Birkmire Robert

来源：Thin Solid Films, 2010, 519(1): 178-183.

DOI：10.1016/j.tsf.2010.07.097

• Hot wire chemical vapor deposition
• Silicon
• Aluminum-induced crystallization

Aluminum-induced crystallization of amorphous silicon films is discussed. Amorphous Si films were deposited by hot wire chemical vapor deposition onto Al coated glass substrates at 430 degrees C. Complete crystallization of a-Si films was achieved during a-Si deposition by controlling Al and Si layer thicknesses. The grain structure of the poly-Si films formed on glass substrate was evaluated by optical and electron microscopy. Continuous poly-Si films were obtained using Al layers with a thickness of 500 nm or less. The average grain size was found to be 10-15 mu m, corresponding to a grain size/thickness ratio greater than 20.

• 出版日期2010-10-29