摘要

In this paper, we present the use of symbolic regression for the black-box modelling of non-linear dynamic behaviour in the AC/DC rectifiers of radio-frequency identification (RFID) circuits. Typical simulations of an AC/DC rectifier are exceptionally slow when performed using conventional transistor-level simulations. The proposed modelling strategy is capable of modelling the transient process, i.e., the change in the output voltage as a function of time, both accurately and efficiently. The accuracy and the simulation speed are compared to the transistor-level simulations. The results show that the symbolic regression models are accurate and several orders of magnitude faster than the transistor-level models. The proposed strategy is demonstrated for rectifiers designed using 130-nm, 180-nm and 0.35-mu m CMOS process. The simulation speed-up factor of the proposed model is shown to be between 1080 and 3.84E6 times for a root-mean-square error (RMSE) below 4.8 mV.

  • 出版日期2014-11-15