Microstructural, crystal structure and electrical characteristics of shock-consolidated Ga2O3 doped ZnO bulk

作者：Kim Youngkook^*; Tomoaki Ikegami; Itoh Shigeru

来源：Powder Technology, 2011, 208(3): 575-581.

DOI：10.1016/j.powtec.2010.12.020

• Underwater shock compaction
• Grain boundary resistance
• Ga2O3 doped ZnO
• Nonlinear current-voltage (I-V)
• characteristic

Ga2O3 (5 wt.%) doped zinc oxide (ZnO, 95 wt.%) bulk was fabricated by underwater shock compaction technique. The microstructural, crystal structure and electrical properties of shock-consolidated samples were investigated and compared to a commercially available sintered Ga2O3 (5 wt.%) doped ZnO (95 wt.%). The relative density of shock-consolidated sample was about 97% of the theoretical density, and no grain growth and lattice defects were confirmed. The grain boundary resistance was remarkably higher than that of commercial sintered Ga2O3 doped ZnO and nonlinear current-voltage (I-V) characteristics of shock-consolidated ZnO and Ga2O3 doped ZnO were very lower than that of commercial ZnO varistor.

• 出版日期2011-4-10