Annealing temperature effects on (111)-oriented BiFeO3 thin films deposited on Pt/Ti/SiO2/Si by chemical solution deposition

作者:Jin Linghua; Tang Xianwu*; Song Dongpo; Wei Renhuai; Yang Jie; Dai Jianming; Song Wenhai; Zhu Xuebin; Sun Yuping
来源:Journal of Materials Chemistry C, 2015, 3(41): 10742-10747.
DOI:10.1039/c5tc02379c

摘要

As the most-studied multiferroic material, (111)-oriented BiFeO3 (BFO) thin films are desirable due to the highest polarization in the (111) plane. The difficulty of achieving large-area (111)-oriented BFO films on silicon wafers towards implementation with silicon technology has hindered the development of BFO films. Herein, we report the annealing temperature effects on chemical solution deposition (CSD) derived BFO films on Pt(111)/Ti/SiO2/Si substrates without any buffer layer. The derived BFO films shows a strong (111) orientation with a distorted rhombohedral structure and R3c space group. The annealing temperature effects on the microstructures as well as the properties were investigated. A dense and crack-free surface was obtained in the low-temperature annealed films. Relatively high room-temperature remnant polarization 2P(r) (120-140 mu C cm(-2)) could be obtained with low leakage (similar to 10(-5) A cm(-2) at 200 kV cm(-1)). Scanning electron microscopy and transmission electron microscopy showed that this is an available route for fabricating large-area (111)-oriented BFO films on silicon-based wafers with high 2Pr using low-cost solution processing.