Schottky mechanism for Ni/Au contact with chlorine-treated n-type GaN layer

作者：Chen Po Sung; Lee Tsung Hsin; Lai Li Wen; Lee Ching Ting^*

来源：Journal of Applied Physics, 2007, 101(2): 024507.

DOI：10.1063/1.2427100

To investigate the function of chlorination treatment, Schottky diodes with Ni/Au contact and chlorine-treated n-type GaN were fabricated. The resultant Schottky barrier height and ideality factor of the chlorine-treated Schottky diodes were improved. The corresponding increase in photoluminescence intensity and carrier lifetime of the chlorine-treated n-type GaN was achieved using photoluminescence and time-resolved photoluminescence measurements. The improved performance of chlorine-treated Schottky diodes was attributed to the reduction of surface states as a result of reduced Ga dangling bonds and the N vacancies being passivated by the formation of GaOx on the surface of n-type GaN.

• 出版日期2007-1-15
• 单位中央民族大学