Atomic scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content

作者：Hoffmann L^*; Bremers H; Joenen H; Rossow U; Schowalter M; Mehrtens T; Rosenauer A; Hangleiter A

来源：Applied Physics Letters, 2013, 102(10): 102110.

DOI：10.1063/1.4795623

Using scanning transmission electron microscopy (STEM), we have studied ultra-thin (%26lt;2 nm) GaInN quantum wells (QWs) on c-plane GaN with high indium content (%26gt;25 %) suitable for blue-green light emitting devices. We are able to analyze the QW on an atomic scale with high resolution STEM and derive the indium content quantitatively. In our analysis, we find that indium is not only incorporated into the QW but also into the barriers under certain growth conditions. We observe indium tails or even plateau-like structures in the barriers, caused by excess indium being supplied during quantum well growth.

• 出版日期2013-3-11