摘要

Both bismuth and copper are non-toxic and earth-abundant elements suitable for lead-free halide perovskite-like photovoltaic devices. Here, we report a highly facile route for in-situ producing copper-bismuth-iodide (CuBiI4) thin films directly on ITO substrate at room temperature, by utilizing a Bi-Cu alloy layer as precursor. X-ray diffraction and transmission electron microscopy (TEM) results verified the formation of well crystallized CuBiI4 thin films with [222] orientation. The transient photovoltage (TPV) analysis revealed that the CuBiI4 is an n-type semiconductor with a suitable band gap of similar to 1.81 eV, preferable to photoelectric conversion compared with CH3NH3PbI3. It is very interesting that the subsequent spin-coating process of the classical Spiro-MeOTAD organic solution with TBP and acetonitrile resulted in a dense and smooth CuBiI4:Spiro-MeOTAD bulk-heterojunction film. The preliminarily fabricated simple sandwich structures of ITO/CuBiI4:Spiro-MeOTAD/Au hybrid solar cell devices displayed efficient photovoltaic performance with the PCE up to 1.119% of the best sample. The room temperature direct metal surface elemental reaction (DMSER) method may provide a new insight for all-inorganic lead free perovskite-like A(a)B(b)X(x) compounds and high performance photovoltaic devices.