Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System

作者：Nakamine Yoshifumi^*; Inaba Naoki; Kodera Tetsuo; Uchida Ken; Pereira Rui N; Stegner Andre R; Brandt Martin S; Stutzman Martin; Oda Shunri

来源：Japanese Journal of Applied Physics, 2011, 50(2): 025002.

DOI：10.1143/JJAP.50.025002

In this paper, we describe the size reduction and phosphorus doping of silicon nanocrystals (SiNCs) fabricated using a very high frequency (VHF) plasma deposition system. The size reduction of SiNCs is achieved by changing the VHF plasma power. The size of SiNCs changes from 10 to 5 nm. We discuss the relationship between VHF plasma power and the size of SiNCs in terms of radicals in the VHF plasma, such as SiH3, SiH2, SiH, and H. On the other hand, we have fabricated phosphorus-doped SiNCs by adding PH3 gas diluted with Ar gas. To confirm where phosphorus atoms are located, electrically detected magnetic resonance (EDMR) measurements are conducted. We have observed a hyperfine interaction between unpaired electrons and phosphorus atoms and enhanced hyperfine splitting owing to a quantum size effect. As a result, we can conclude that phosphorus atoms exist at substitutional sites of SiNCs and they act as donors.

• 出版日期2011-2