摘要

Unlike previous HF etching of Si oxides to produce porous Si a new concept for the preparation of porous SiOx was suggested adopting Si as a pore generating agent and Si oxides as template using NaOH solution. The heat treatment of pristine SiO at 900 degrees C provided nano-crystalline Si within the SiOx matrix. The nanocrystalline Si was dissolved to provide pore size of 200 similar to 500 nm, while most of the SiOx matrix remained as a template during NaOH etching. The surface area of the etched SiO was increased more than 5 times compared with not-etched SiO. The porous SiOx anode exhibited a stable reversible capacity of about 1240 mAh g(-1) over 100 cycles at 0.2 C.

  • 出版日期2014-1-20