Alternative precursor growth of quantum dot-based VCSELs and edge emitters for near infrared wavelengths

作者：Kaiander IN^*; Hopfer F; Kettler T; Pohl UW; Bimberg D

来源：Journal of Crystal Growth, 2004, 272(1-4): 154-160.

DOI：10.1016/j.jcrsgro.2004.08.103

• metalorganic vapor phase epitaxy
• solid state lasers
• laser diodes

Growth of up to 10 stacks of long wavelength InGaAs quantum dots (QDs) for laser applications is demonstrated, using metalorganic chemical vapor deposition (MOCVD) with exclusively non-hydride precursors. Lasing at 1240 nm is achieved at room temperature using two different types of QDs, namely InGaAs QDs deposited on GaAs, and InAs QDs deposited on thin InGaAs templates. Both kinds of QDs were overgrown with InGaAs quantum wells in order to increase the emission wavelength. Defect-reducing in situ annealing to improve luminescence and laser properties of the QDs was successfully realized. Based on InGaAs QDs, we fabricated an electrically driven vertical-cavity surface-emitting laser. This is, to our knowledge, the first electrically driven QD-VCSEL grown by MOCVD presently attaining a maximum output power of 0.7 mW at 1.1 mum.

• 出版日期2004-12-10