摘要

For solving the problem that Eu3+ -activated phosphors cannot be well excited by the near UV-LED chips, the charge transfer band (CTB) of Eu3+-N3- in alpha-M3B2N4 (M = Ca, Sr) has been investigated in this work. Compared with the sharp excitation peaks due to the f-f transitions of Eu3+, the charge transfer band is broad and the excitation band of alpha-M3B2N4 (M = Ca, Sr):Eu3+ centered at 370 or 350 nm lies in near-UV, implying a promising excitation. The electron and crystal structures of alpha-M3B2N4 (M = Ca, Sr) has been analyzed in detailed, indicating that they all crystallize in cubic phase with the space group (Im (3) over barm) and have similar band-gap structures. The double bond of [N = B=N](3-) combining with the face-shared (Ca, Sr)N-6 octahedron forms the stable and compact crystal structure, and the band gap with the value about 4 eV is suitable for Eu3+ to form a luminescent center. Under near-UV excitation, the sharp red light that peaked at 613 and 593 run resulting from the f-f transition of Eu3+ ions has been obtained. The optimal concentration of Eu3+ in the alpha-M3B2N4 (M = Ca, Sr) has been measured, and the decay curves of samples prove that the energy transfer happens between Eu3+ ions through the dipole-dipole interaction. The thermal stability of samples has been measured to access their application in the WLED.