Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors

作者：Oproglidis Theodoros A; Tsormpatzoglou Andreas; Tassis Dimitrios H; Karatsori Theano A; Barraud Sylvain; Ghibaudo Gerard; Dimitriadis Charalabos A

来源：IEEE Transactions on Electron Devices, 2017, 64(1): 66-72.

DOI：10.1109/TED.2016.2632753

• Compact modeling
• drain current
• junctionless (JL)
• triple-gate (TG) transistors

A new charge-based analytical compact model for the drain current of junctionless (JL) triple-gate MOSFETs is presented, which includes the short-channel effects, the saturation velocity overshoot, the series resistance, and the mobility degradation effects. The proposed model consists of a single analytical equation that covers the depletion operation region in which the bulk conduction determines the drain current. The model is supported by experimental measurements in JL nanowire transistors with channel length varying from 95 to 25 nm and doping concentration 2 x 10(19) cm(-3). The overall results reveal the very good accuracy of the proposed analytical compact model, making it suitable for circuit simulation tools.

• 出版日期2017-1
• 单位中国地震局