摘要
The fabrication of biologically inspired solid-state devices has attracted tremendous attention for decades, and the hardware implementation of artificial synapses using individual ionic/electronic hybrid devices is very important for neuromorphic applications. Herein, electric double-layer (EDL) synaptic transistors coupled by proton neurotransmitters with a multiple in-plane gate structure were successfully fabricated using SnO2 nanowires. Not only the important synaptic functions were mimicked in these devices, but also the synaptic behaviors can be modulated over a dynamic range via the multi terminal regulation of synaptic inputs. Furthermore, a light source was used to illuminate the SnO2 nanowire synaptic transistors, which were used as the light-modulating terminals. The observed neuromorphic functions were also dynamically modulated via the light density. These excellent nanoscale synaptic transistors may find significant applications in synaptic electronics.
- 出版日期2016-12-21
- 单位中南大学