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摘要
As the complementary metal oxide semiconductor feature size shrinks further, single event multiple transients (SEMTs) become more serious. However, SEMTs have not yet been appropriately modelled through traditional soft error rate (SER) estimation methods. Therefore, this paper presents a mixed-level framework to estimate SER induced by SEMTs. The precision of the proposed framework is verified through HSPICE simulation. The results show that multiple pulses and convergence of SEMTs significantly affect SER estimation.
- 出版日期2016-5-3
- 单位中国人民解放军国防科学技术大学
