Dark current analysis in high-speed germanium p-i-n waveguide photodetectors

作者：Chen H^*; Verheyen P; De Heyn P; Lepage G; De Coster J; Balakrishnan S; Absil P; Roelkens G; Van Campenhout J

来源：Journal of Applied Physics, 2016, 119(21): 213105.

DOI：10.1063/1.4953147

We present a dark current analysis in waveguide-coupled germanium vertical p-i-n photodetectors. In the analysis, a surface leakage current and a bulk leakage current were separated, and their activation energies were extracted. The surface leakage current originating from the minority carrier generation on the Ge layer sidewalls, governed by the Shockley-Read-Hall process and enhanced by the trap-assisted-tunneling process, was identified as the main contribution to the dark current of vertical p-i-n photodiodes at room temperature. The behavior of this surface leakage current as a function of temperature and reverse bias voltage is well reproduced by using the Hurckx model for trap-assisted-tunneling. Published by AIP Publishing.

• 出版日期2016-6-7