Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach

作者：Oh Seungha; Yang Bong Seob; Kim Yoon Jang; Oh Myeong Sook; Jang Mi; Yang Hoichang; Jeong Jae Kyeong^*; Hwang Cheol Seong; Kim Hyeong Joon

来源：Applied Physics Letters, 2012, 101(9): 092107.

DOI：10.1063/1.4748884

This study examined the effects of the indium fraction in indium zinc oxide (IZO) on the performance and stability of IZO thin film transistors (TFTs). The field-effect mobility and sub-threshold swing were much improved with increasing In fraction; 41.0 cm(2)/Vs and 0.2V/decade, respectively, at 85 at. % In, compared to 1.1 cm(2)/Vs and 2.4V/decade of ZnO TFTs. In contrast, a local minimum negative bias illumination stress instability was observed near 73-77 at. % In. This behavior was explained by a poly-crystalline to amorphous phase transition in IZO thin films.

• 出版日期2012-8-27