Aluminum-Catalyzed Growth of aEuro(1)110aEuro(0) Silicon Nanowires

作者：Hainey Mel Jr^*; Eichfeld Sarah M; Shen Haoting; Yim Joanne; Black Marcie R; Redwing Joan M

来源：Journal of Electronic Materials, 2015, 44(5): 1332-1337.

DOI：10.1007/s11664-014-3565-8

• Silicon
• nanowire
• < 110 > growth direction
• chemical vapor deposition

The growth of silicon nanowires in the aEuro(1)110aEuro(0) direction is reported using a vapor-liquid-solid mechanism with aluminum as the catalyst and SiH4 as the source gas in a low pressure chemical vapor deposition process. The effects of growth conditions on the yield of aEuro(1)110aEuro(0) versus aEuro(1)111aEuro(0) nanowires were investigated. Increasing reactor pressure beyond 300 Torr was found to improve aEuro(1)110aEuro(0) wire yield by suppressing vapor-solid thin film deposition on the nanowire sidewalls during growth that promoted nanowire kinking. Additionally, aEuro(1)110aEuro(0) growth was found to occur only at temperatures below the Al-Si eutectic temperature (577A degrees C). At temperatures approximately equal to 577A degrees C or higher, the preferential growth direction was observed to shift from aEuro(1)110aEuro(0) to aEuro(1)111aEuro(0). The growth of aEuro(1)110aEuro(0) Si nanowires at sub-eutectic temperatures was attributed to a reduction in the silicon concentration in the catalyst droplet which promotes (110) surface nucleation and subsequent growth in the aEuro(1)110aEuro(0) direction.

• 出版日期2015-5