A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures

作者：Feng, Li-Wei; Chang, Chun-Yen^*; Chang, Yao-Feng; Chen, Wei-Ren; Wang, Shin-Yuan; Chiang, Pei-Wei; Chang, Ting-Chang

来源：Applied Physics Letters, 2010, 96(5): 052111.

DOI：10.1063/1.3294632

• electrical resistivity
• electrodes
• plasma materials processing
• Poole-Frenkel effect
• random-access storage

Large (>10(2)) and stable resistance switching characteristics were demonstrated in TiN/SiO2/Fe structure due to the presence of a thin FeOx transition layer at the SiO2/Fe interface, produced spontaneously during the plasma-enhanced tetraethyl orthosilicate oxide deposition process. Addition of Pt into Fe electrode, i.e., a TiN/SiO2/Fe0.73Pt0.27 structure, was observed to improve the data dispersion of switching parameters, associating with the decrease in Fe content inside the FeOx layer. Additionally, current-voltage fitting data shows that current transport mechanism is governed by Ohm's law in low voltage region and Pool-Frenkel behavior in high voltage region, consisting with FeOx phase transition characteristics.

• 出版日期2010-2-1
• 单位中山大学