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摘要
In this paper, the charge-controlled and flux-controlled memristor mathematical models are derived detailedly. The continuously variable conductance and memory properties of memristors are researched. An implementation scheme for analog memory using pulse controlled memristors is proposed, and its effectiveness is verified through theoretical analysis and simulation experiments. With crossbar array structure, the scheme is expected to achieve large-scale analog storage arrays, which may greatly promote the development of artificial neural networks and analog computers.
- 出版日期2011
- 单位西南大学
