A 0.13 mu m CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation

作者：Agawa Kenichi^*; Ishizuka Shinichiro; Majima Hideaki; Kobayashi Hiroyuki; Koizumi Masayuki; Nagano Takeshi; Arai Makoto; Shimizu Yutaka; Maki Asuka; Urakawa Go; Terada Tadashi; Itoh Nobuyuki; Hamada Mototsugu; Fujii Fumie; Kato Tadamasa; Yoshitomi Sadayuki; Otsuka Nobuaki

来源：IEICE - Transactions on Electronics, 2010, E93C(6): 803-811.

DOI：10.1587/transele.E93.C.803

• CMOS wireless transceiver
• Bluetooth
• sensitivity
• temperature compensation
• phase noise
• VCO pulling
• MOS switch
• leakage current

A 2.4 GHz 0.13 mu m CMOS transceiver LSI, supporting Bluetooth V2.1 + enhanced data rate (EDR) standard, has achieved a high reception sensitivity and high-quality transmission signals between -40 degrees C and +90 degrees C. A low-IF receiver and direct-conversion transmitter architecture are employed. A temperature compensated receiver chain including a low-noise amplifier accomplishes a sensitivity of -90 dBm at frequency shift keying modulation even in the worst environmental condition. Design optimization of phase noise in a local oscillator and linearity of a power amplifier improves transmission signals and enables them to meet Bluetooth radio specifications. Fabrication in scaled 0.13 mu m CMOS and operation at a low supply voltage of 1.5 V result in small area and low power consumption.

• 出版日期2010-6