A 1-6 GHz analog radio frequency power driver in 90 nm complementary metal-oxide semiconductor technology for wireless applications

作者：Ren Saiyu^*; Abraham Isaac; Hong Seng

来源：International Journal of Circuit Theory and Applications, 2015, 43(2): 263-276.

DOI：10.1002/cta.1941

• CMOS analog circuit
• CMOS RF power amplifier
• RF power amplifier measurements
• RF power driver
• wireless communication

One of the most challenging subsystems for integrated radio frequency (RF) complementary metal-oxide semiconductor (CMOS) solutions is the power amplifier. A 1-6GHz RF power driver (RFPD) in 90nm CMOS technology is presented, which receives signals from on-chip RF signal chain components at -12dBm power levels and produces a 0dBm signal to on-chip or off-chip 50 loads. A unique unit cell design is developed for the RFPD to offset issues associated with very wide multi-fingered transistors. The RF driver was fabricated as a stand-alone sub-circuit on a 90nm CMOS die with other sub-circuits. Experimental tests confirmed that the on-chip RFPD operates up to 6GHz and is able to drive 50 loads to the desired 0dBm power level. Spur free dynamic range exceeded 70dB. The measured power gain was 11.6dB at 3GHz. The measured 1dB compression point and input third-order intercept point (IIP3) were -4.7dBm and -0.5dBm, respectively. Also, included are modeling, simulation, and measured results addressing issues associated with interfacing the die to a package with pinouts and the package to a printed circuit test fixture. The simulations were made through direct current (DC), alternating current (AC), and transient analysis with Cadence Analog Design Environment. The stability was also verified on the basis of phase margin simulations from extracted circuit net-lists.

• 出版日期2015-2