Deep donor center in Ge1-x Si (x) aOE (c) Cu,In,Sb > crystals at 1050-1080 K

作者：Azhdarov G Kh^*; Zeynalov Z M; Kyazimova V K; Huseynli L A

来源：Inorganic Materials, 2010, 46(12): 1285-1289.

DOI：10.1134/S0020168510120022

Hall effect measurements demonstrate that quenching of Ge1 - x Si (x) aOE (c) Cu,In,Sb > (0 a parts per thousand currency sign x a parts per thousand currency sign 0.20) multiply doped crystals from 1050-1080 K leads to the formation of additional deep donor centers. The energy level of the centers is located in the bottom half of the band gap of the Ge1 - x Si (x) crystals and is a linear function of host composition. Annealing the crystals at 550-570 K completely eliminates the additional donor levels. The most likely model of the additional deep donors is a pair of substitutional copper and indium atoms (CusIns) or a complex of a copper interstitial and a substitutional indium atom (CuiIns).

• 出版日期2010-12