Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti1-xCrxN films

作者：Duan X F; Mi W B^*; Guo Z B; Bai H L

来源：Acta Materialia, 2012, 60(9): 3690-3697.

DOI：10.1016/j.actamat.2012.03.043

• Nitrides
• Magnetic thin films
• Electrical properties
• Magnetoresistance
• Sputtering

Reactive-sputtered epitaxial Ti1-xCrxN films are ferromagnetic in the range of 0.17 %26lt;= x %26lt;= 0.51 due to the Cr-N-Cr double-exchange interaction below the Curie temperature (T-C). The T-C first increases, then decreases as x increases, and a maximum of 120 K appears at x = 0.47. All of the films are metallic with a transition near T-C. A resistivity minimum rho(min) is observed below 60 K in the films with 0.10 %26lt;= x %26lt;= 0.51 due to the effects of the weak localization and electron-electron interaction. The negative magnetoresistance (MR) is caused by the double-exchange interaction below T-C and the weak localization can also contribute to MR below T-min where rho(min) appears. The x-dependent electron carrier densities reveal that the ferromagnetism is not from the carrier-mediated mechanism. The anomalous Hall resistivity follows the relation of rho(A)(xy) proportional to rho(2)(xx), which is from the side-jump mechanism.

• 出版日期2012-5
• 单位天津大学