Application of advanced 200 GHz Si-Ge HBTs for high dose radiation environments

作者：Praveen K C; Pushpa N; Prabakara Y P; Govindaraj G; Cressler John D; Prakash A P Gnana^*

来源：Solid-State Electronics, 2010, 54(12): 1554-1560.

DOI：10.1016/j.sse.2010.08.003

• Si-Ge HBT
• High dose gamma irradiation
• G/R traps
• E-B spacer oxide
• STI oxide
• Transconductance

Third generation 200 GHz silicon-germanium Heterojunction Bipolar Transistors (Si-Ge HBTs) were irradiated with high dose Co-60 gamma radiation up to 100 Mrad Pre-radiation and post-radiation DC figures of merits were used to quantify the radiation tolerance of the different geometry devices The different electrical characteristics like Gummel measurements excess base current current gain trans-conductance neutral base recombination avalanche multiplication of carriers and output characteristics were

• 出版日期2010-12