科研之友
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摘要
We employ empirical tight-binding simulations on strained tetrahedral amorphous carbon and diamond nanocomposite networks. For each applied strain, the optoelectronic properties are monitored through the absorption coefficient and the dielectric function. These lead to the optical gaps and are able to quantify the amount of disorder in the structures. We compare our results to those of unstrained nanostructured diamond and amorphous carbon ( a-C) phases and link the degree of disorder in these materials to their structural details as a function of the external load. The atomic rearrangements and distortions imposed by the external strain in these structures are directly observable in their optoelectronic properties. We thoroughly discuss the interplay between increased external strain, structural and topological disorder, atomic rearrangements and their effect on the calculated optoelectronic properties.
- 出版日期2012-5-23
