Direct Patterning on Sol-Gel Low-k Porous Silica by Thermal Nanoimprinting

作者：Okada Makoto^*; Nakayama Takahiro; Kang Yuji; Haruyama Yuichi; Kanda Kazuhiro; Matsui Shinji

来源：Japanese Journal of Applied Physics, 2010, 49(6): 06GL08.

DOI：10.1143/JJAP.49.06GL08

The direct patterning of low-dielectric constant (low-k) materials via nanoimprint lithography (NIL) has the potential to simplify fabrication processes and significantly reduce the manufacturing costs of semiconductor devices. It is known that a low k is realized by introducing a large number of nanoscale pores into a material. We demonstrated nanoimprinting on a sol-gel low-k material (k similar to 2.0) formed using methyl silicate as a siloxane oligomer source and surfactants as a pore template. As a result, 200-nm-linewidth mold patterns were successfully transferred onto the sol-gel low-k material by thermal nanoimprinting at 200 degrees C. However, pattern shrinkage was observed. The imprinted pattern linewidth was 180 nm. We assumed from the Fourier transform infrared spectroscopy (FT-IR) spectra of the sol-gel film before and after baking that the pattern shrinkage was induced by the condensation reaction.

• 出版日期2010