A Small Spot, Inert Gas, Ion Milling Process as a Complementary Technique to Focused Ion Beam Specimen Preparation

作者：Fischione Paul E^*; Williams Robert E A; Genc Arda; Fraser Hamish L; Dunin Borkowski Rafal E; Luy**erg Martina; Bonifacio Cecile S; Kovacs Andras

来源：Microscopy and Microanalysis, 2017, 23(4): 782-793.

DOI：10.1017/S1431927617000514

• ion milling
• focused ion beam
• amorphous damage
• implantation
• artifact

This paper reports on the substantial improvement of specimen quality by use of a low voltage (0.05 to similar to 1 keV), small diameter (similar to 1 mu m), argon ion beam following initial preparation using conventional broad-beam ion milling or focused ion beam. The specimens show significant reductions in the amorphous layer thickness and implanted artifacts. The targeted ion milling controls the specimen thickness according to the needs of advanced aberration-corrected and/or analytical transmission electron microscopy applications.

• 出版日期2017-8