科研之友
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摘要
We consider a model of the stripe Schottky contact with a uniformly doped semiconductor. It is assumed that at the boundary of the semiconductor, the position of the Fermi level is fixed due to the high density of surface states in the band gap. An analytical solution of the problem of the potential distribution, the shape of the depletion region, and the high-frequency capacitance of the contact is found in the full depletion approximation. Based on the approach developed, we study quadratic nonlinear properties of the FET with a Schottky barrier in the high-frequency signal detection mode.
- 出版日期2014-6-28
