Degradation of AlGaN/GaN Light Emitting Diodes caused by Carbon Contamination with Reverse-bias Stress Test in Water Vapor

作者：Chen Hsiang^*; He Yun Yang; Lin Min Han; Lin Shang Ren; Hung Sheng Hao; Hsieh Kun Min; Tsai Shin Jie; Chu Yu Cheng

来源：Journal of New Materials for Electrochemical Systems, 2016, 19(1): 11-13.

DOI：10.14447/jnmes.v19i1.341

• AlGaN/GaN
• light emitting diodes
• electrochemical reaction
• carbon contamination
• energy dispersive X-ray diffraction

Resolving failure origins of AlGaN/GaN light emitting diodes (LED) has received intensive study recently. In this study, formation of GaCO3 caused by carbon contamination may result in deformation of the electrode near the surface and degrade the device. The electrochemical reactions may cause device damages. Degradation in electrical properties is observed in I-V characteristics. Forward-bias and reverse-bias EL images are used to trace the damaged areas. Furthermore, focus ion beam (FIB), scanning electron microscope (SEM), energy dispersive X-ray diffraction (EDX) are applied to examine the damaged areas. Results indicate that formation of GaCO3 may deform the electrode, generate the reverse-bias EL and cause the degradation.

• 出版日期2016