Luminescence of GaS : Er3+ and GaS : Er3+, Yb3+ layered crystals

作者:Georgobiani A N; Tagiev B G; Tagiev O B; Abushov S A; Eiyubov G Yu
来源:Inorganic Materials, 2008, 44(1): 1-5.
DOI:10.1134/S0020168508010019

摘要

Data are presented on the 300-K photoluminescence in GaS crystals doped with Er3+ or codoped with Er3+ and Yb3+. IR excitation (lambda(ex) = 976 nm) gives rise to anti- Stokes luminescence in GaS:Er (3+) (0.1 at %) and GaS:Er3+, Yb3+ (0.1 + 0.1 at %) and leads to an increased intensity of the emission due to the I-4(11/2) -> I-4(15/2) transitions. The anti-Stokes luminescence is shown to result from consecutive absorption of two photons by one Er3+ ion, and the increased intensity of Er3+ luminescence in GaS: Er3+, Yb3+ is due to energy transfer from Yb3+ to Er3+.

  • 出版日期2008-1

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