摘要
Data are presented on the 300-K photoluminescence in GaS crystals doped with Er3+ or codoped with Er3+ and Yb3+. IR excitation (lambda(ex) = 976 nm) gives rise to anti- Stokes luminescence in GaS:Er (3+) (0.1 at %) and GaS:Er3+, Yb3+ (0.1 + 0.1 at %) and leads to an increased intensity of the emission due to the I-4(11/2) -> I-4(15/2) transitions. The anti-Stokes luminescence is shown to result from consecutive absorption of two photons by one Er3+ ion, and the increased intensity of Er3+ luminescence in GaS: Er3+, Yb3+ is due to energy transfer from Yb3+ to Er3+.
- 出版日期2008-1