Molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi2Se3 thin films on hexagonal boron nitride

作者：Park Joon Young; Lee Gil Ho; Jo Janghyun; Cheng Austin K; Yoon Hosang; Watanabe Kenji; Taniguchi Takashi; Kim Miyoung; Kim Philip^*; Yi Gyu Chul

来源：2D Materials, 2016, 3(3): 035029.

DOI：10.1088/2053-1583/3/3/035029

• topological insulator
• hexagonal boron nitride
• molecular beam epitaxy
• bismuth selenide
• magnetotransport

We report the molecular beam epitaxial growth and characterization of high quality topological insulator Bi2Se3 thin films on hexagonal boron nitride (h-BN). A two-step growth was developed, enhancing both the surface coverage and crystallinity of the films on h-BN. High-resolution transmission electron microscopy study showed an atomically abrupt and epitaxial interface formation between the h-BN substrate and Bi2Se3. We performed gate tuned magnetotransport characterizations of the device fabricated on the thin film and confirmed a high mobility surface state at the Bi2Se3/h-BN interface. The Berry phase obtained from Shubnikov-de Haas oscillations suggested this interfacial electronic state is a topologically protected Dirac state.

• 出版日期2016-9