Al2O3/AlGaN Channel Normally-Off MOSFET on Silicon With High Breakdown Voltage

作者：Freedsman Joseph J^*; Hamada Takeaki; Miyoshi Makato; Egawa Takashi

来源：IEEE Electron Device Letters, 2017, 38(4): 497-500.

DOI：10.1109/LED.2017.2662710

• AlGaN channel
• normally-Off
• MOS-FET
• buffer leakage
• breakdown voltage (BV)

A normally-Off metal-oxide-semiconductor field-effect transistor (MOS-FET) is proposed by using AlInN/AlGaN heterostructure grown on silicon. The AlGaN channel MOSFET with Al2O3 layer as gate insulator exhibits a drain current of 90 mA/mm at the gate bias of +8 V, an ON/OFF drain-current ratio of 1.4 x 10(8), a peak field-effect mobility of 97 cm(2)/V.s, and threshold voltage of +2.4 V, respectively. With significant reduction in leakage currents, the MOS-FETwith a gate-to-drain spacing of 20 mu m delivers a high breakdown of 993 V. The present results of Al2O3/AlGaN normally-Off MOSFET signifies promising prospects for future high power and high voltage applications.

• 出版日期2017-4