Morphology, composition and electrical properties of SnO2:Cl thin films grown by atomic layer deposition

作者：Cheng Hsyi En^*; Wen Chia Hui; Hsu Ching Ming

来源：Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 2016, 34(1): 01A112.

DOI：10.1116/1.4933328

Chlorine doped SnO2 thin films were prepared using atomic layer deposition at temperatures between 300 and 450 degrees C using SnCl4 and H2O as the reactants. Composition, structure, surface morphology, and electrical properties of the as-deposited films were examined. Results showed that the as-deposited SnO2 films all exhibited rutile structure with [O]/[Sn] ratios between 1.35 and 1.40. The electrical conductivity was found independent on [O]/[Sn] ratio but dependent on chlorine doping concentration, grain size, and surface morphology. The 300 degrees C-deposited film performed a higher electrical conductivity of 315 S/cm due to its higher chlorine doping level, larger grain size, and smoother film surface. The existence of Sn2+ oxidation state was demonstrated to minimize the effects of chlorine on raising the electrical conductivity of films.

• 出版日期2016-1