A Single-Trim CMOS Bandgap Reference With a 3 sigma Inaccuracy of +/- 0.15% From-40 degrees C to 125 degrees C

作者：Ge Guang^*; Zhang Cheng; Hoogzaad Gian; Makinwa Kofi A A

来源：IEEE Journal of Solid-State Circuits, 2011, 46(11): 2693-2701.

DOI：10.1109/JSSC.2011.2165235

• Chopping
• CMOS bandgap reference
• curvature correction
• room temperature trim

A CMOS bandgap reference with an inaccuracy of +/- 0.15% (3 sigma) from -40 degrees C to 125 degrees C is presented. In contrast to prior art, it requires only a single trim to achieve this level of precision. A detailed analysis of the various error sources is provided, and techniques to reduce them are discussed. The prototype bandgap reference draws 55 mu A from a 1.8 V supply, and occupies 0.12 mm(2) in a 0.16 mu m CMOS process. Experimental results from two runs show that, with the use of chopping and higher-order curvature correction to remove non-PTAT errors, the residual error of a bandgap reference is mainly PTAT, and can be removed by a single room temperature trim.

• 出版日期2011-11