Doping of vanadium to nanocrystalline diamond films by hot filament chemical vapor deposition

作者：Zhang, Yaozhong; Zhang, Liying; Zhao, Jiang; Wang, Liang; Zhao, Gang; Zhang, Yafei^*

来源：Nanoscale Research Letters, 2012, 7: 441.

DOI：10.1186/1556-276X-7-441

• Nanocrystalline diamond
• Vanadium dopant
• Donor state levels
• Structural distortion toleration

Doping an impure element with a larger atomic volume into crystalline structure of buck crystals is normally blocked because the rigid crystalline structure could not tolerate a larger distortion. However, this difficulty may be weakened for nanocrystalline structures. Diamonds, as well as many semiconductors, have a difficulty in effective doping. Theoretical calculations carried out by DFT indicate that vanadium (V) is a dopant element for the n-type diamond semiconductor, and their several donor state levels are distributed between the conduction band and middle bandgap position in the V-doped band structure of diamond. Experimental investigation of doping vanadium into nanocrystalline diamond films (NDFs) was first attempted by hot filament chemical vapor deposition technique. Acetone/H-2 gas mixtures and vanadium oxytripropoxide (VO(OCH2CH2CH3)(3)) solutions of acetone with V and C elemental ratios of 1:5,000, 1:2,000, and 1:1,000 were used as carbon and vanadium sources, respectively. The resistivity of the V-doped NDFs decreased two orders with the increasing V/C ratios.

• 出版日期2012-8-8
• 单位上海交通大学