科研之友
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摘要
The frequency dependence of the capacitance variation between dark and near-infrared-modulated illumination conditions is measured for metal-oxide-semiconductor structures with germanium nanocrystals embedded in a thick SiO2 film grown on a silicon substrate. The results have shown that the device is expected to be sensitive at high frequencies (up to 111 GHz) making it a good candidate for optoelectronic high-speed use and for optical communication applications.
- 出版日期2016-7
- 单位四川大学
